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APTM50DHM38G

APTM50DHM38G

For Reference Only

Part Number APTM50DHM38G
PNEDA Part # APTM50DHM38G
Description MOSFET 2N-CH 500V 90A SP6
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,230
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTM50DHM38G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTM50DHM38G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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APTM50DHM38G Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureStandard
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C90A
Rds On (Max) @ Id, Vgs45mOhm @ 45A, 10V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs246nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds11200pF @ 25V
Power - Max694W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP6
Supplier Device PackageSP6

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Input Capacitance (Ciss) (Max) @ Vds

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

1.1W (Ta)

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150°C (TJ)

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Vgs(th) (Max) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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