AT-41511-TR1G
For Reference Only
| Part Number | AT-41511-TR1G |
| PNEDA Part # | AT-41511-TR1G |
| Description | RF TRANS NPN 12V SOT143 |
| Manufacturer | Broadcom |
| Unit Price | Request a Quote |
| In Stock | 7,524 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 24 - Jun 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AT-41511-TR1G Resources
| Brand | Broadcom |
| ECAD Module |
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| Mfr. Part Number | AT-41511-TR1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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AT-41511-TR1G Specifications
| Manufacturer | Broadcom Limited |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz |
| Gain | 11dB ~ 15.5dB |
| Power - Max | 225mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-253-4, TO-253AA |
| Supplier Device Package | SOT-143 |
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Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
