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AUIRF3808S

AUIRF3808S

For Reference Only

Part Number AUIRF3808S
PNEDA Part # AUIRF3808S
Description MOSFET N-CH 75V 106A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,856
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUIRF3808S Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUIRF3808S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
AUIRF3808S, AUIRF3808S Datasheet (Total Pages: 11, Size: 674.31 KB)
PDFAUIRF3808S Datasheet Cover
AUIRF3808S Datasheet Page 2 AUIRF3808S Datasheet Page 3 AUIRF3808S Datasheet Page 4 AUIRF3808S Datasheet Page 5 AUIRF3808S Datasheet Page 6 AUIRF3808S Datasheet Page 7 AUIRF3808S Datasheet Page 8 AUIRF3808S Datasheet Page 9 AUIRF3808S Datasheet Page 10 AUIRF3808S Datasheet Page 11

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AUIRF3808S Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C106A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7mOhm @ 82A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs220nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5310pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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