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AUIRG4PH50S

AUIRG4PH50S

For Reference Only

Part Number AUIRG4PH50S
PNEDA Part # AUIRG4PH50S
Description IGBT 1200V 57A 200W TO247AC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 16,164
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUIRG4PH50S Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUIRG4PH50S
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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AUIRG4PH50S Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)57A
Current - Collector Pulsed (Icm)114A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 33A
Power - Max200W
Switching Energy1.8mJ (on), 19.6mJ (off)
Input TypeStandard
Gate Charge167nC
Td (on/off) @ 25°C32ns/845ns
Test Condition960V, 33A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

620µJ (on), 300µJ (off)

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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