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AUIRGSL30B60K

AUIRGSL30B60K

For Reference Only

Part Number AUIRGSL30B60K
PNEDA Part # AUIRGSL30B60K
Description IGBT 600V 78A 370W TO262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 14,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 6 - Jun 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUIRGSL30B60K Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUIRGSL30B60K
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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AUIRGSL30B60K Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)78A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 30A
Power - Max370W
Switching Energy350µJ (on), 825µJ (off)
Input TypeStandard
Gate Charge102nC
Td (on/off) @ 25°C46ns/185ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

21A

Current - Collector Pulsed (Icm)

75A

Vce(on) (Max) @ Vge, Ic

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Power - Max

47W

Switching Energy

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Input Type

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Gate Charge

49nC

Td (on/off) @ 25°C

27ns/88ns

Test Condition

400V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

58ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

22ns/100ns

Test Condition

800V, 21A, 10Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Renesas Electronics America

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Renesas Electronics America

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 30A

Power - Max

290W

Switching Energy

2.3mJ (on), 1.7mJ (off)

Input Type

Standard

Gate Charge

105nC

Td (on/off) @ 25°C

46ns/125ns

Test Condition

600V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

180ns

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

2.1mJ (on), 1.3mJ (off)

Input Type

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Gate Charge

200nC

Td (on/off) @ 25°C

75ns/315ns

Test Condition

600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

130ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

TO-247AC

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