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AUXTLR3110Z

AUXTLR3110Z

For Reference Only

Part Number AUXTLR3110Z
PNEDA Part # AUXTLR3110Z
Description MOSFET N-CH 100V DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,628
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUXTLR3110Z Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUXTLR3110Z
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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AUXTLR3110Z Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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Drive Voltage (Max Rds On, Min Rds On)

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

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FET Feature

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Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

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