BAS16TT1G
For Reference Only
| Part Number | BAS16TT1G |
| PNEDA Part # | BAS16TT1G |
| Description | DIODE GEN PURP 100V 200MA SC75 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 217,980 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BAS16TT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | BAS16TT1G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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BAS16TT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 200mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 6ns |
| Current - Reverse Leakage @ Vr | 1µA @ 75V |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-75, SOT-416 |
| Supplier Device Package | SC-75, SOT-416 |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 240A Voltage - Forward (Vf) (Max) @ If 720mV @ 240A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 500mV @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 30V Capacitance @ Vr, F 200pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -55°C ~ 125°C |
