BAT82S-TAP
For Reference Only
| Part Number | BAT82S-TAP |
| PNEDA Part # | BAT82S-TAP |
| Description | DIODE SCHOTTKY 50V 30MA DO35 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 8,784 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BAT82S-TAP Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | BAT82S-TAP |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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BAT82S-TAP Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101 |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Current - Average Rectified (Io) | 30mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 15mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 200nA @ 50V |
| Capacitance @ Vr, F | 1.6pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Supplier Device Package | DO-35 |
| Operating Temperature - Junction | 125°C (Max) |
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Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 950mV @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 100V Capacitance @ Vr, F 45pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AB, SMC Supplier Device Package DO-214AB (SMC) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 1.7V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer STMicroelectronics Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 30ns Current - Reverse Leakage @ Vr 3µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction 175°C (Max) |
