BAWH56WT1G
For Reference Only
| Part Number | BAWH56WT1G |
| PNEDA Part # | BAWH56WT1G |
| Description | 70V ANODE DIODE |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,456 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 11 - May 16 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BAWH56WT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | BAWH56WT1G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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- Orders cannot be canceled after shipping the packages.
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BAWH56WT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | * |
| Diode Type | - |
| Voltage - DC Reverse (Vr) (Max) | - |
| Current - Average Rectified (Io) | - |
| Voltage - Forward (Vf) (Max) @ If | - |
| Speed | - |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Capacitance @ Vr, F | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Operating Temperature - Junction | - |
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Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 200mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10nA @ 180V Capacitance @ Vr, F 4pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 Operating Temperature - Junction 150°C (Max) |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 800mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1µA @ 100V Capacitance @ Vr, F 65pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-220AA Supplier Device Package DO-220AA (SMP) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Diodes Incorporated Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 500mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 20V Capacitance @ Vr, F 200pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AA, SMB Supplier Device Package SMB Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, eSMP®, TMBS® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 760mV @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 800µA @ 100V Capacitance @ Vr, F 850pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package DO-221BC (SMPA) Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 600mV @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200µA @ 30V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package D-PAK (TO-252AA) Operating Temperature - Junction -40°C ~ 150°C |
