Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BCR141E6433HTMA1

BCR141E6433HTMA1

For Reference Only

Part Number BCR141E6433HTMA1
PNEDA Part # BCR141E6433HTMA1
Description TRANS PREBIAS NPN 250MW SOT23-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,910
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BCR141E6433HTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBCR141E6433HTMA1
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
BCR141E6433HTMA1, BCR141E6433HTMA1 Datasheet (Total Pages: 11, Size: 867.67 KB)
PDFBCR 141S H6727 Datasheet Cover
BCR 141S H6727 Datasheet Page 2 BCR 141S H6727 Datasheet Page 3 BCR 141S H6727 Datasheet Page 4 BCR 141S H6727 Datasheet Page 5 BCR 141S H6727 Datasheet Page 6 BCR 141S H6727 Datasheet Page 7 BCR 141S H6727 Datasheet Page 8 BCR 141S H6727 Datasheet Page 9 BCR 141S H6727 Datasheet Page 10 BCR 141S H6727 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BCR141E6433HTMA1 Datasheet
  • where to find BCR141E6433HTMA1
  • Infineon Technologies

  • Infineon Technologies BCR141E6433HTMA1
  • BCR141E6433HTMA1 PDF Datasheet
  • BCR141E6433HTMA1 Stock

  • BCR141E6433HTMA1 Pinout
  • Datasheet BCR141E6433HTMA1
  • BCR141E6433HTMA1 Supplier

  • Infineon Technologies Distributor
  • BCR141E6433HTMA1 Price
  • BCR141E6433HTMA1 Distributor

BCR141E6433HTMA1 Specifications

ManufacturerInfineon Technologies
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition130MHz
Power - Max250mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3; MPAK

DTDG14GPT100

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

60V

Resistor - Base (R1)

-

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

300 @ 500mA, 2V

Vce Saturation (Max) @ Ib, Ic

400mV @ 5mA, 500mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

80MHz

Power - Max

2W

Mounting Type

Surface Mount

Package / Case

TO-243AA

Supplier Device Package

MPT3

DTC023JUBTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 5mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-85

Supplier Device Package

UMT3F

DDTD113EU-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

1 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

33 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SOT-323

DTA123EKAT146

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 20mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3

Recently Sold

RL2010FK-070R43L

RL2010FK-070R43L

Yageo

RES 0.43 OHM 1% 3/4W 2010

M24M01-RMN6P

M24M01-RMN6P

STMicroelectronics

IC EEPROM 1M I2C 1MHZ 8SO

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

LT1118CST-2.5#TRPBF

LT1118CST-2.5#TRPBF

Linear Technology/Analog Devices

IC REG LIN 2.5V 800MA SOT223-3

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

1N5254B

1N5254B

ON Semiconductor

DIODE ZENER 27V 500MW DO35

MAX232EWE

MAX232EWE

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SOIC

MPSA70RLRMG

MPSA70RLRMG

ON Semiconductor

TRANS PNP 40V 0.1A TO-92

ZHCS1000TA

ZHCS1000TA

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOT23-3

2773021447

2773021447

Fair-Rite Products

FERRITE BEAD 2SMD 1LN

IRLH5030TRPBF

IRLH5030TRPBF

Infineon Technologies

MOSFET N-CH 100V 13A 8PQFN

S34ML08G101BHI000

S34ML08G101BHI000

SkyHigh Memory Limited

IC FLASH 8G PARALLEL 63BGA