Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BCR553E6327HTSA1

BCR553E6327HTSA1

For Reference Only

Part Number BCR553E6327HTSA1
PNEDA Part # BCR553E6327HTSA1
Description TRANS PREBIAS PNP 300MW SOT23-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,434
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BCR553E6327HTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBCR553E6327HTSA1
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
BCR553E6327HTSA1, BCR553E6327HTSA1 Datasheet (Total Pages: 6, Size: 525.76 KB)
PDFBCR553E6327HTSA1 Datasheet Cover
BCR553E6327HTSA1 Datasheet Page 2 BCR553E6327HTSA1 Datasheet Page 3 BCR553E6327HTSA1 Datasheet Page 4 BCR553E6327HTSA1 Datasheet Page 5 BCR553E6327HTSA1 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BCR553E6327HTSA1 Datasheet
  • where to find BCR553E6327HTSA1
  • Infineon Technologies

  • Infineon Technologies BCR553E6327HTSA1
  • BCR553E6327HTSA1 PDF Datasheet
  • BCR553E6327HTSA1 Stock

  • BCR553E6327HTSA1 Pinout
  • Datasheet BCR553E6327HTSA1
  • BCR553E6327HTSA1 Supplier

  • Infineon Technologies Distributor
  • BCR553E6327HTSA1 Price
  • BCR553E6327HTSA1 Distributor

BCR553E6327HTSA1 Specifications

ManufacturerInfineon Technologies
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition150MHz
Power - Max330mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

The Products You May Be Interested In

NSVDTA144EET1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Supplier Device Package

SC-75, SOT-416

DTA124XU3HZGT106

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

UMT3

DTA125TKAT146

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

200 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 50µA, 500µA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3

DRA5115G0L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

-

Resistor - Emitter Base (R2)

100 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SC-85

Supplier Device Package

SMini3-F2-B

UNR51A3G0L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

80mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

80MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SC-85

Supplier Device Package

SMini3-F2

Recently Sold

SI4368DY-T1-E3

SI4368DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 17A 8-SOIC

AD8033ARZ

AD8033ARZ

Analog Devices

IC OPAMP VFB 1 CIRCUIT 8SOIC

UFT14020

UFT14020

GeneSiC Semiconductor

DIODE GEN PURP 200V 70A TO249AB

EPM1270F256I5N

EPM1270F256I5N

Intel

IC CPLD 980MC 6.2NS 256FBGA

VI-LU3-CU

VI-LU3-CU

Vicor

POWER SUPP 24V 8.33A

0154007.DR

0154007.DR

Littelfuse

FUSE BRD MNT 7A 125VAC/VDC 2SMD

AP2127K-1.8TRG1

AP2127K-1.8TRG1

Diodes Incorporated

IC REG LINEAR 1.8V 300MA SOT23-5

MPX5010DP

MPX5010DP

NXP

SENSOR DIFF PRESS 1.45 PSI MAX

FT4232HL-REEL

FT4232HL-REEL

FTDI, Future Technology Devices International Ltd

IC USB HS QUAD UART/SYNC 64-LQFP

MAX5056BASA+

MAX5056BASA+

Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

MC34063ABD

MC34063ABD

STMicroelectronics

IC REG BUCK BST ADJ 1.5A 8SO

LTST-C191KSKT

LTST-C191KSKT

Lite-On Inc.

LED YELLOW CLEAR SMD