BFG 235 E6327
For Reference Only
| Part Number | BFG 235 E6327 |
| PNEDA Part # | BFG-235-E6327 |
| Description | RF TRANS NPN 15V 5.5GHZ SOT223-4 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,176 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFG 235 E6327 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFG 235 E6327 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
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Notes
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BFG 235 E6327 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 5.5GHz |
| Noise Figure (dB Typ @ f) | 1.7dB @ 900MHz |
| Gain | 12.5dB |
| Power - Max | 2W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 200mA, 8V |
| Current - Collector (Ic) (Max) | 300mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223-4 |
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1GHz Noise Figure (dB Typ @ f) 4.5dB @ 500MHz Gain - Power - Max 300mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 2mA, 1V Current - Collector (Ic) (Max) 25mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB (SOT23) |
