BFP405E6327BTSA1
For Reference Only
| Part Number | BFP405E6327BTSA1 |
| PNEDA Part # | BFP405E6327BTSA1 |
| Description | RF TRANS NPN 5V 25GHZ SOT343-4 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,058 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFP405E6327BTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFP405E6327BTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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BFP405E6327BTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| Frequency - Transition | 25GHz |
| Noise Figure (dB Typ @ f) | 1.25dB @ 1.8GHz |
| Gain | 23dB |
| Power - Max | 75mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 4V |
| Current - Collector (Ic) (Max) | 25mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-82A, SOT-343 |
| Supplier Device Package | PG-SOT343-4 |
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Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 5V Frequency - Transition 25GHz Noise Figure (dB Typ @ f) 1.25dB @ 1.8GHz Gain 23dB Power - Max 75mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 4V Current - Collector (Ic) (Max) 25mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package SOT-343 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 650MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 6GHz Noise Figure (dB Typ @ f) 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz Gain 9.5dB ~ 14.5dB Power - Max 300mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA, 8V Current - Collector (Ic) (Max) 90mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 4.5GHz Noise Figure (dB Typ @ f) 1.2dB @ 1GHz Gain 9dB Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 7mA, 3V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SC-70-3 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 35V Frequency - Transition 175MHz Noise Figure (dB Typ @ f) - Gain 7.6dB Power - Max 60W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA, 5V Current - Collector (Ic) (Max) 5A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case M135 Supplier Device Package M135 |
