BFP650H6327XTSA1
For Reference Only
| Part Number | BFP650H6327XTSA1 |
| PNEDA Part # | BFP650H6327XTSA1 |
| Description | RF TRANS NPN 4.5V 37GHZ SOT343-4 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 245,856 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFP650H6327XTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFP650H6327XTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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BFP650H6327XTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| Frequency - Transition | 37GHz |
| Noise Figure (dB Typ @ f) | 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz |
| Gain | 10.5dB ~ 21.5dB |
| Power - Max | 500mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 80mA, 3V |
| Current - Collector (Ic) (Max) | 150mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-82A, SOT-343 |
| Supplier Device Package | PG-SOT343-4 |
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Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 5V Frequency - Transition 25GHz Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz Gain 21dB Power - Max 160mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 20mA, 4V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package SOT-343 |
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Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 65V Frequency - Transition 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f) - Gain 8dB Power - Max 400W DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A, 5V Current - Collector (Ic) (Max) 12A Operating Temperature 250°C (TJ) Mounting Type Chassis Mount Package / Case M218 Supplier Device Package M218 |
Manufacturer Central Semiconductor Corp Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92 |
