BFR181WH6327XTSA1
For Reference Only
| Part Number | BFR181WH6327XTSA1 |
| PNEDA Part # | BFR181WH6327XTSA1 |
| Description | RF TRANS NPN 12V 8GHZ SOT323-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 337,194 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFR181WH6327XTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFR181WH6327XTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
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- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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BFR181WH6327XTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz |
| Gain | 19dB |
| Power - Max | 175mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 8V |
| Current - Collector (Ic) (Max) | 20mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | PG-SOT323-3 |
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 11GHz Noise Figure (dB Typ @ f) 1.25dB @ 1.8GHz Gain 15.5dB Power - Max 450mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 8V Current - Collector (Ic) (Max) 50mA Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-143R Supplier Device Package SOT-143R |
