BFR182WH6327XTSA1
For Reference Only
| Part Number | BFR182WH6327XTSA1 |
| PNEDA Part # | BFR182WH6327XTSA1 |
| Description | RF TRANS NPN 12V 8GHZ SOT323-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 27,858 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFR182WH6327XTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFR182WH6327XTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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BFR182WH6327XTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz |
| Gain | 19dB |
| Power - Max | 250mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 8V |
| Current - Collector (Ic) (Max) | 35mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | PG-SOT323-3 |
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Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain 12dB ~ 18dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 8V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer STMicroelectronics Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 55V Frequency - Transition - Noise Figure (dB Typ @ f) - Gain 15dB ~ 17dB Power - Max 330W DC Current Gain (hFE) (Min) @ Ic, Vce 23 @ 10A, 6V Current - Collector (Ic) (Max) 40A Operating Temperature 200°C (TJ) Mounting Type Surface Mount Package / Case M177 Supplier Device Package M177 |
Manufacturer CEL Series - Transistor Type 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 4.5GHz Noise Figure (dB Typ @ f) 1.2dB @ 1GHz Gain - Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 7mA, 3V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SOT-363 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 16V Frequency - Transition 870MHz Noise Figure (dB Typ @ f) - Gain 9.5dB Power - Max 2W DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V Current - Collector (Ic) (Max) 150mA Operating Temperature - Mounting Type Surface Mount Package / Case Macro-X Supplier Device Package Macro-X |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 3.5V Frequency - Transition 45GHz Noise Figure (dB Typ @ f) 0.95dB @ 1.8GHz Gain 22.5dB Power - Max 100mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 20mA, 2V Current - Collector (Ic) (Max) 40mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package PG-SOT343-4 |
