BFR840L3RHESDE6327XTSA1
For Reference Only
| Part Number | BFR840L3RHESDE6327XTSA1 |
| PNEDA Part # | BFR840L3RHESDE6327XTSA1 |
| Description | RF TRANS NPN 2.6V 75GHZ TSLP-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,784 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFR840L3RHESDE6327XTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFR840L3RHESDE6327XTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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Notes
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BFR840L3RHESDE6327XTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 2.6V |
| Frequency - Transition | 75GHz |
| Noise Figure (dB Typ @ f) | 0.5dB @ 450MHz |
| Gain | 27dB |
| Power - Max | 75mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 10mA, 1.8V |
| Current - Collector (Ic) (Max) | 35mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 |
| Supplier Device Package | PG-TSLP-3 |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 850MHz Noise Figure (dB Typ @ f) 6.5dB @ 200MHz Gain 15dB ~ 23dB Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 10V Current - Collector (Ic) (Max) 30mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
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