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BFU520R

BFU520R

For Reference Only

Part Number BFU520R
PNEDA Part # BFU520R
Description RF TRANS NPN 12V 10.5GHZ SOT143B
Manufacturer NXP
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BFU520R Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBFU520R
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
BFU520R, BFU520R Datasheet (Total Pages: 22, Size: 304.04 KB)
PDFBFU520VL Datasheet Cover
BFU520VL Datasheet Page 2 BFU520VL Datasheet Page 3 BFU520VL Datasheet Page 4 BFU520VL Datasheet Page 5 BFU520VL Datasheet Page 6 BFU520VL Datasheet Page 7 BFU520VL Datasheet Page 8 BFU520VL Datasheet Page 9 BFU520VL Datasheet Page 10 BFU520VL Datasheet Page 11

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BFU520R Specifications

ManufacturerNXP USA Inc.
SeriesAutomotive, AEC-Q101
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition10.5GHz
Noise Figure (dB Typ @ f)0.65dB @ 900MHz
Gain20dB
Power - Max450mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 8V
Current - Collector (Ic) (Max)30mA
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-253-4, TO-253AA
Supplier Device PackageSOT-143B

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Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.25dB @ 1.8GHz

Gain

15.5dB

Power - Max

450mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 15mA, 8V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-40°C ~ 150°C (TJ)

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

4.7V

Frequency - Transition

46GHz

Noise Figure (dB Typ @ f)

0.55dB ~ 1.7dB @ 150MHz ~ 10GHz

Gain

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Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

110 @ 30mA, 3V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

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Package / Case

4-SMD, Flat Leads

Supplier Device Package

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Manufacturer

NXP USA Inc.

Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

2.8V

Frequency - Transition

25GHz

Noise Figure (dB Typ @ f)

0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz

Gain

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Power - Max

234mW

DC Current Gain (hFE) (Min) @ Ic, Vce

235 @ 10mA, 2V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

SOT-343F

Supplier Device Package

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Manufacturer

NXP USA Inc.

Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

9GHz

Noise Figure (dB Typ @ f)

1.1dB ~ 2.1dB @ 900MHz

Gain

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Power - Max

500mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 20mA, 6V

Current - Collector (Ic) (Max)

70mA

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

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Supplier Device Package

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MPA201

Microsemi

Manufacturer

Microsemi Corporation

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

22V

Frequency - Transition

2GHz

Noise Figure (dB Typ @ f)

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Gain

13dB

Power - Max

6W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 100mA, 5V

Current - Collector (Ic) (Max)

300mA

Operating Temperature

200°C (TJ)

Mounting Type

Chassis Mount

Package / Case

55AU

Supplier Device Package

55AU

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