BFU520WF
For Reference Only
| Part Number | BFU520WF |
| PNEDA Part # | BFU520WF |
| Description | RF TRANS NPN 12V 10GHZ SOT323-3 |
| Manufacturer | NXP |
| Unit Price | Request a Quote |
| In Stock | 2,214 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFU520WF Resources
| Brand | NXP |
| ECAD Module |
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| Mfr. Part Number | BFU520WF |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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BFU520WF Specifications
| Manufacturer | NXP USA Inc. |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1dB @ 1.8GHz |
| Gain | 13dB |
| Power - Max | 450mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 8V |
| Current - Collector (Ic) (Max) | 30mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | SOT-323-3 |
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Manufacturer Renesas Electronics America Inc. Series - Transistor Type 5 NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 3.5dB @ 1GHz Gain - Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 2V Current - Collector (Ic) (Max) 65mA Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case 16-VFQFN Exposed Pad Supplier Device Package 16-QFN (3x3) |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 6dB @ 60MHz Gain 15dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
