BFU530R
For Reference Only
| Part Number | BFU530R |
| PNEDA Part # | BFU530R |
| Description | RF TRANS NPN 12V 11GHZ SOT143B |
| Manufacturer | NXP |
| Unit Price | Request a Quote |
| In Stock | 5,580 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFU530R Resources
| Brand | NXP |
| ECAD Module |
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| Mfr. Part Number | BFU530R |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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BFU530R Specifications
| Manufacturer | NXP USA Inc. |
| Series | Automotive, AEC-Q101 |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 11GHz |
| Noise Figure (dB Typ @ f) | 0.6dB @ 900MHz |
| Gain | 21.5dB |
| Power - Max | 450mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 8V |
| Current - Collector (Ic) (Max) | 40mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-253-4, TO-253AA |
| Supplier Device Package | SOT-143B |
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Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 48V Frequency - Transition 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f) - Gain 9.3dB Power - Max 25W DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 250mA, 5V Current - Collector (Ic) (Max) 900mA Operating Temperature 250°C (TJ) Mounting Type Chassis Mount Package / Case M222 Supplier Device Package M222 |
Manufacturer NXP USA Inc. Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 1W DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 70mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package SOT-223 |
