BLT70,115
For Reference Only
| Part Number | BLT70,115 |
| PNEDA Part # | BLT70-115 |
| Description | RF TRANS NPN 8V 900MHZ SOT223 |
| Manufacturer | NXP |
| Unit Price | Request a Quote |
| In Stock | 8,190 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BLT70 Resources
| Brand | NXP |
| ECAD Module |
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| Mfr. Part Number | BLT70,115 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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Notes
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BLT70 Specifications
| Manufacturer | NXP USA Inc. |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 8V |
| Frequency - Transition | 900MHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 2.1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 100mA, 4.8V |
| Current - Collector (Ic) (Max) | 250mA |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
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Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
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