Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BMS3004-1E

BMS3004-1E

For Reference Only

Part Number BMS3004-1E
PNEDA Part # BMS3004-1E
Description MOSFET P-CH 75V 68A TO-220F-3SG
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 14,946
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BMS3004-1E Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberBMS3004-1E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BMS3004-1E, BMS3004-1E Datasheet (Total Pages: 5, Size: 264.76 KB)
PDFBMS3004-1E Datasheet Cover
BMS3004-1E Datasheet Page 2 BMS3004-1E Datasheet Page 3 BMS3004-1E Datasheet Page 4 BMS3004-1E Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BMS3004-1E Datasheet
  • where to find BMS3004-1E
  • ON Semiconductor

  • ON Semiconductor BMS3004-1E
  • BMS3004-1E PDF Datasheet
  • BMS3004-1E Stock

  • BMS3004-1E Pinout
  • Datasheet BMS3004-1E
  • BMS3004-1E Supplier

  • ON Semiconductor Distributor
  • BMS3004-1E Price
  • BMS3004-1E Distributor

BMS3004-1E Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C68A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 34A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13400pF @ 20V
FET Feature-
Power Dissipation (Max)2W (Ta), 40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3SG
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

SI7117DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

2.17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 12.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

IXTY2N80P

IXYS

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

5.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

10.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 25V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDC608PZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

30mOhm @ 5.8A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1330pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6

Package / Case

SOT-23-6 Thin, TSOT-23-6

TPH3208PD

Transphorm

Manufacturer

Transphorm

Series

-

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 13A, 8V

Vgs(th) (Max) @ Id

2.6V @ 300µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 8V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

760pF @ 400V

FET Feature

-

Power Dissipation (Max)

96W (Tc)

Operating Temperature

-55°C ~ 150°C

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

TPN3R704PL,L1Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIX-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.7mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2.4V @ 0.2mA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 20V

FET Feature

-

Power Dissipation (Max)

630mW (Ta), 86W (Tc)

Operating Temperature

175°C

Mounting Type

Surface Mount

Supplier Device Package

8-TSON Advance (3.3x3.3)

Package / Case

8-PowerVDFN

Recently Sold

STM809MWX6F

STM809MWX6F

STMicroelectronics

IC MPU RESET CIRC 4.38V SOT23

ADUM1100ARZ

ADUM1100ARZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 8SOIC

TMP36GT9Z

TMP36GT9Z

Analog Devices

SENSOR ANALOG -40C-125C TO92-3

C8051F120-GQR

C8051F120-GQR

Silicon Labs

IC MCU 8BIT 128KB FLASH 100TQFP

AT45DB161D-SU

AT45DB161D-SU

Adesto Technologies

IC FLASH 16M SPI 66MHZ 8SOIC

DS1624S+

DS1624S+

Maxim Integrated

SENSOR DIGITAL -55C-125C 8SOIC

NC7WZ04P6X

NC7WZ04P6X

ON Semiconductor

IC INVERTER 2CH 2-INP SC70-6

BZX84C5V1LT1G

BZX84C5V1LT1G

ON Semiconductor

DIODE ZENER 5.1V 225MW SOT23-3

IHLP2525CZER220M5A

IHLP2525CZER220M5A

Vishay Dale

FIXED IND 22UH 2.8A 174 MOHM SMD

SI1308EDL-T1-GE3

SI1308EDL-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 1.4A SOT323

MC9S08LC36LK

MC9S08LC36LK

NXP

IC MCU 8BIT 36KB FLASH 80FQFP

SF-1206S400-2

SF-1206S400-2

Bourns

FUSE BOARD MOUNT 4A 32VDC 1206