BRCB064GWZ-3E2
For Reference Only
| Part Number | BRCB064GWZ-3E2 |
| PNEDA Part # | BRCB064GWZ-3E2 |
| Description | IC EEPROM 64K I2C UCSP30L1 |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 27,636 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BRCB064GWZ-3E2 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | BRCB064GWZ-3E2 |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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- Delivery date: usually 2 to 7 working days.
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BRCB064GWZ-3E2 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | EEPROM |
| Technology | EEPROM |
| Memory Size | 64Kb (8K x 8) |
| Memory Interface | I²C |
| Clock Frequency | 400kHz |
| Write Cycle Time - Word, Page | 5ms |
| Access Time | - |
| Voltage - Supply | 1.6V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 6-XFBGA, CSPBGA |
| Supplier Device Package | UCSP30L1 |
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Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 16Kb (2K x 8) Memory Interface SPI Clock Frequency 20MHz Write Cycle Time - Word, Page 5ms Access Time - Voltage - Supply 2.7V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format EPROM Technology EPROM - OTP Memory Size 4Mb (512K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page - Access Time 120ns Voltage - Supply 2.7V ~ 3.6V, 4.5V ~ 5.5V Operating Temperature 0°C ~ 70°C (TC) Mounting Type Surface Mount Package / Case 32-LCC (J-Lead) Supplier Device Package 32-PLCC (13.97x11.43) |
Manufacturer Cypress Semiconductor Corp Series MS-2 Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND Memory Size 2Gb (128M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 45ns Access Time 45ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 63-VFBGA Supplier Device Package 63-BGA (11x9) |
