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BS108G

BS108G

For Reference Only

Part Number BS108G
PNEDA Part # BS108G
Description MOSFET N-CH 200V 0.25A TO-92
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,276
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BS108G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberBS108G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BS108G, BS108G Datasheet (Total Pages: 3, Size: 91.33 KB)
PDFBS108ZL1G Datasheet Cover
BS108ZL1G Datasheet Page 2 BS108ZL1G Datasheet Page 3

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BS108G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2V, 2.8V
Rds On (Max) @ Id, Vgs8Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 25V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

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