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BS7067N06LS3G

BS7067N06LS3G

For Reference Only

Part Number BS7067N06LS3G
PNEDA Part # BS7067N06LS3G
Description MOSFET N-CH 60V 20A TSDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,626
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BS7067N06LS3G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBS7067N06LS3G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BS7067N06LS3G, BS7067N06LS3G Datasheet (Total Pages: 9, Size: 483.96 KB)
PDFBS7067N06LS3G Datasheet Cover
BS7067N06LS3G Datasheet Page 2 BS7067N06LS3G Datasheet Page 3 BS7067N06LS3G Datasheet Page 4 BS7067N06LS3G Datasheet Page 5 BS7067N06LS3G Datasheet Page 6 BS7067N06LS3G Datasheet Page 7 BS7067N06LS3G Datasheet Page 8 BS7067N06LS3G Datasheet Page 9

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BS7067N06LS3G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4800pF @ 30V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8
Package / Case8-PowerVDFN

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