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BSB012NE2LX

BSB012NE2LX

For Reference Only

Part Number BSB012NE2LX
PNEDA Part # BSB012NE2LX
Description MOSFET N-CH 25V 170A WDSON-2
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,318
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSB012NE2LX Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSB012NE2LX
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSB012NE2LX, BSB012NE2LX Datasheet (Total Pages: 13, Size: 1,445.56 KB)
PDFBSB012NE2LX Datasheet Cover
BSB012NE2LX Datasheet Page 2 BSB012NE2LX Datasheet Page 3 BSB012NE2LX Datasheet Page 4 BSB012NE2LX Datasheet Page 5 BSB012NE2LX Datasheet Page 6 BSB012NE2LX Datasheet Page 7 BSB012NE2LX Datasheet Page 8 BSB012NE2LX Datasheet Page 9 BSB012NE2LX Datasheet Page 10 BSB012NE2LX Datasheet Page 11

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BSB012NE2LX Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C37A (Ta), 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4900pF @ 12V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 57W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON

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