BSB013NE2LXIXUMA1
For Reference Only
| Part Number | BSB013NE2LXIXUMA1 |
| PNEDA Part # | BSB013NE2LXIXUMA1 |
| Description | MOSFET N-CH 25V 163A WDSON-2 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 40,812 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 7 - May 12 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
BSB013NE2LXIXUMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | BSB013NE2LXIXUMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BSB013NE2LXIXUMA1 Datasheet
- where to find BSB013NE2LXIXUMA1
- Infineon Technologies
- Infineon Technologies BSB013NE2LXIXUMA1
- BSB013NE2LXIXUMA1 PDF Datasheet
- BSB013NE2LXIXUMA1 Stock
- BSB013NE2LXIXUMA1 Pinout
- Datasheet BSB013NE2LXIXUMA1
- BSB013NE2LXIXUMA1 Supplier
- Infineon Technologies Distributor
- BSB013NE2LXIXUMA1 Price
- BSB013NE2LXIXUMA1 Distributor
BSB013NE2LXIXUMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 163A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 12V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Package / Case | 3-WDSON |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 47A (Ta), 303A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.7mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10144pF @ 15V FET Feature - Power Dissipation (Max) 3.2W (Ta), 134W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer IXYS Series PolarP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 170A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12600pF @ 25V FET Feature - Power Dissipation (Max) 890W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 27A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 27A, 10V Vgs(th) (Max) @ Id 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4130pF @ 10V FET Feature - Power Dissipation (Max) 2.8W (Ta), 89W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ MX Package / Case DirectFET™ Isometric MX |
Manufacturer Alpha & Omega Semiconductor Inc. Series SDMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1430pF @ 15V FET Feature - Power Dissipation (Max) 2.4W (Ta), 31W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN (5x6) Package / Case 8-PowerSMD, Flat Leads |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 14mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2105pF @ 25V FET Feature - Power Dissipation (Max) 75W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
