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BSB015N04NX3GXUMA1

BSB015N04NX3GXUMA1

For Reference Only

Part Number BSB015N04NX3GXUMA1
PNEDA Part # BSB015N04NX3GXUMA1
Description MOSFET N-CH 40V 180A 2WDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 45,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSB015N04NX3GXUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSB015N04NX3GXUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSB015N04NX3GXUMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C36A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs142nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12000pF @ 20V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON

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