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BSB019N03LX G

BSB019N03LX G

For Reference Only

Part Number BSB019N03LX G
PNEDA Part # BSB019N03LX-G
Description MOSFET N-CH 30V 174A 2WDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,778
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSB019N03LX G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSB019N03LX G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSB019N03LX G, BSB019N03LX G Datasheet (Total Pages: 11, Size: 548.29 KB)
PDFBSB019N03LX G Datasheet Cover
BSB019N03LX G Datasheet Page 2 BSB019N03LX G Datasheet Page 3 BSB019N03LX G Datasheet Page 4 BSB019N03LX G Datasheet Page 5 BSB019N03LX G Datasheet Page 6 BSB019N03LX G Datasheet Page 7 BSB019N03LX G Datasheet Page 8 BSB019N03LX G Datasheet Page 9 BSB019N03LX G Datasheet Page 10 BSB019N03LX G Datasheet Page 11

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BSB019N03LX G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C32A (Ta), 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs92nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8400pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON

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