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BSB056N10NN3GXUMA1

BSB056N10NN3GXUMA1

For Reference Only

Part Number BSB056N10NN3GXUMA1
PNEDA Part # BSB056N10NN3GXUMA1
Description MOSFET N-CH 100V 9A WDSON-2
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 101,856
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSB056N10NN3GXUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSB056N10NN3GXUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSB056N10NN3GXUMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs74nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5500pF @ 50V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 78W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON

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