Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSC010N04LSTATMA1

BSC010N04LSTATMA1

For Reference Only

Part Number BSC010N04LSTATMA1
PNEDA Part # BSC010N04LSTATMA1
Description DIFFERENTIATED MOSFETS
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,300
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC010N04LSTATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC010N04LSTATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSC010N04LSTATMA1 Datasheet
  • where to find BSC010N04LSTATMA1
  • Infineon Technologies

  • Infineon Technologies BSC010N04LSTATMA1
  • BSC010N04LSTATMA1 PDF Datasheet
  • BSC010N04LSTATMA1 Stock

  • BSC010N04LSTATMA1 Pinout
  • Datasheet BSC010N04LSTATMA1
  • BSC010N04LSTATMA1 Supplier

  • Infineon Technologies Distributor
  • BSC010N04LSTATMA1 Price
  • BSC010N04LSTATMA1 Distributor

BSC010N04LSTATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C39A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs133nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9520pF @ 20V
FET Feature-
Power Dissipation (Max)3W (Ta), 167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8 FL
Package / Case8-PowerTDFN

The Products You May Be Interested In

NVD6820NLT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

90V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4209pF @ 25V

FET Feature

-

Power Dissipation (Max)

4W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTLJF4156NTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

70mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

427pF @ 15V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

710mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WDFN (2x2)

Package / Case

6-WDFN Exposed Pad

NTA7002NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

154mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

7Ohm @ 154mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

20pF @ 5V

FET Feature

-

Power Dissipation (Max)

300mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75, SOT-416

Package / Case

SC-75, SOT-416

CSD19535KCS

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

150A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

3.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

101nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7930pF @ 50V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

TK100A10N1,S4X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8800pF @ 50V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

Recently Sold

X9C503SIZT1

X9C503SIZT1

Renesas Electronics America Inc.

IC DGTL POT 50KOHM 100TAP 8SOIC

AD9240AS

AD9240AS

Analog Devices

IC ADC 14BIT PIPELINED 44MQFP

MPZ2012S300AT000

MPZ2012S300AT000

TDK

FERRITE BEAD 30 OHM 0805 1LN

0451007.MRL

0451007.MRL

Littelfuse

FUSE BRD MNT 7A 125VAC/VDC 2SMD

PI4ULS5V202UEX

PI4ULS5V202UEX

Diodes Incorporated

IC TRNSLTR BIDIRECTIONAL 8MSOP

NE5534AN

NE5534AN

ON Semiconductor

IC OPAMP GP 1 CIRCUIT 8DIP

MIC29302BU

MIC29302BU

Microchip Technology

IC REG LINEAR POS ADJ 3A TO263-5

CTX01-15473

CTX01-15473

Eaton - Electronics Division

FIXED INDUCTOR

SIT9102AI-243N25E200.00000X

SIT9102AI-243N25E200.00000X

SiTIME

MEMS OSC XO 200.0000MHZ LVDS SMD

AD8031ARZ

AD8031ARZ

Analog Devices

IC OPAMP VFB 1 CIRCUIT 8SOIC

MC14489BPE

MC14489BPE

NXP

IC LED DRIVER 5-CH CMOS 20-DIP

RB551V-30-TP

RB551V-30-TP

Micro Commercial Co

DIODE SCHOTTKY 20V 500MA SOD323