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BSC012N06NSATMA1

BSC012N06NSATMA1

For Reference Only

Part Number BSC012N06NSATMA1
PNEDA Part # BSC012N06NSATMA1
Description TRENCH 40<-<100V
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,662
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC012N06NSATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC012N06NSATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC012N06NSATMA1, BSC012N06NSATMA1 Datasheet (Total Pages: 11, Size: 836.01 KB)
PDFBSC012N06NSATMA1 Datasheet Cover
BSC012N06NSATMA1 Datasheet Page 2 BSC012N06NSATMA1 Datasheet Page 3 BSC012N06NSATMA1 Datasheet Page 4 BSC012N06NSATMA1 Datasheet Page 5 BSC012N06NSATMA1 Datasheet Page 6 BSC012N06NSATMA1 Datasheet Page 7 BSC012N06NSATMA1 Datasheet Page 8 BSC012N06NSATMA1 Datasheet Page 9 BSC012N06NSATMA1 Datasheet Page 10 BSC012N06NSATMA1 Datasheet Page 11

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BSC012N06NSATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100A
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs143nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11000pF @ 30V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSON-8-3
Package / Case8-PowerTDFN

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