BSC014N04LSIATMA1
For Reference Only
| Part Number | BSC014N04LSIATMA1 |
| PNEDA Part # | BSC014N04LSIATMA1 |
| Description | MOSFET N-CH 40V 100A TDSON-8 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 47,886 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSC014N04LSIATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BSC014N04LSIATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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BSC014N04LSIATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.45mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 FL |
| Package / Case | 8-PowerTDFN |
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Manufacturer IXYS Series Polar™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 140A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 24mOhm @ 70A, 10V Vgs(th) (Max) @ Id 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 25V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-264 (IXTK) Package / Case TO-264-3, TO-264AA |
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 137nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9997pF @ 30V FET Feature - Power Dissipation (Max) 338W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
