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BSC027N10NS5ATMA1

BSC027N10NS5ATMA1

For Reference Only

Part Number BSC027N10NS5ATMA1
PNEDA Part # BSC027N10NS5ATMA1
Description TRENCH >=100V
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,694
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC027N10NS5ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC027N10NS5ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC027N10NS5ATMA1, BSC027N10NS5ATMA1 Datasheet (Total Pages: 11, Size: 831.21 KB)
PDFBSC027N10NS5ATMA1 Datasheet Cover
BSC027N10NS5ATMA1 Datasheet Page 2 BSC027N10NS5ATMA1 Datasheet Page 3 BSC027N10NS5ATMA1 Datasheet Page 4 BSC027N10NS5ATMA1 Datasheet Page 5 BSC027N10NS5ATMA1 Datasheet Page 6 BSC027N10NS5ATMA1 Datasheet Page 7 BSC027N10NS5ATMA1 Datasheet Page 8 BSC027N10NS5ATMA1 Datasheet Page 9 BSC027N10NS5ATMA1 Datasheet Page 10 BSC027N10NS5ATMA1 Datasheet Page 11

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BSC027N10NS5ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.8V @ 146µA
Gate Charge (Qg) (Max) @ Vgs111nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8200pF @ 50V
FET Feature-
Power Dissipation (Max)3W (Ta), 214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSON-8-3
Package / Case8-PowerTDFN

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