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BSC029N025S G

BSC029N025S G

For Reference Only

Part Number BSC029N025S G
PNEDA Part # BSC029N025S-G
Description MOSFET N-CH 25V 100A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC029N025S G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC029N025S G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC029N025S G, BSC029N025S G Datasheet (Total Pages: 10, Size: 376.93 KB)
PDFBSC029N025S G Datasheet Cover
BSC029N025S G Datasheet Page 2 BSC029N025S G Datasheet Page 3 BSC029N025S G Datasheet Page 4 BSC029N025S G Datasheet Page 5 BSC029N025S G Datasheet Page 6 BSC029N025S G Datasheet Page 7 BSC029N025S G Datasheet Page 8 BSC029N025S G Datasheet Page 9 BSC029N025S G Datasheet Page 10

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BSC029N025S G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5090pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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