BSC029N025S G
For Reference Only
| Part Number | BSC029N025S G |
| PNEDA Part # | BSC029N025S-G |
| Description | MOSFET N-CH 25V 100A TDSON-8 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,454 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 23 - Jun 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
BSC029N025S G Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | BSC029N025S G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BSC029N025S G Datasheet
- where to find BSC029N025S G
- Infineon Technologies
- Infineon Technologies BSC029N025S G
- BSC029N025S G PDF Datasheet
- BSC029N025S G Stock
- BSC029N025S G Pinout
- Datasheet BSC029N025S G
- BSC029N025S G Supplier
- Infineon Technologies Distributor
- BSC029N025S G Price
- BSC029N025S G Distributor
BSC029N025S G Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 80µA |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5090pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-1 |
| Package / Case | 8-PowerTDFN |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/543 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 38A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 65mOhm @ 38A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 4W (Ta), 150W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-254AA Package / Case TO-254-3, TO-254AA (Straight Leads) |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 19mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 33.8nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 25V FET Feature - Power Dissipation (Max) 80W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 27mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta), 3.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer STMicroelectronics Series MDmesh™ M6 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33.4nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1515pF @ 100V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer Panasonic Electronic Components Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 24mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 3V @ 519µA Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 658pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta), 13W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package HSSO8-F3-B Package / Case 8-PowerSMD, Flat Leads |
