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BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1

For Reference Only

Part Number BSC042NE7NS3GATMA1
PNEDA Part # BSC042NE7NS3GATMA1
Description MOSFET N-CH 75V 100A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,976
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC042NE7NS3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC042NE7NS3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSC042NE7NS3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.8V @ 91µA
Gate Charge (Qg) (Max) @ Vgs69nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4800pF @ 37.5V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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