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BSC057N08NS3GATMA1

BSC057N08NS3GATMA1

For Reference Only

Part Number BSC057N08NS3GATMA1
PNEDA Part # BSC057N08NS3GATMA1
Description MOSFET N-CH 80V 100A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 382,800
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC057N08NS3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC057N08NS3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSC057N08NS3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C16A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs5.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.5V @ 73µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900pF @ 40V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-5
Package / Case8-PowerTDFN

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