Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSC060P03NS3EGATMA1

BSC060P03NS3EGATMA1

For Reference Only

Part Number BSC060P03NS3EGATMA1
PNEDA Part # BSC060P03NS3EGATMA1
Description MOSFET P-CH 30V 17.7A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,474
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC060P03NS3EGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC060P03NS3EGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSC060P03NS3EGATMA1 Datasheet
  • where to find BSC060P03NS3EGATMA1
  • Infineon Technologies

  • Infineon Technologies BSC060P03NS3EGATMA1
  • BSC060P03NS3EGATMA1 PDF Datasheet
  • BSC060P03NS3EGATMA1 Stock

  • BSC060P03NS3EGATMA1 Pinout
  • Datasheet BSC060P03NS3EGATMA1
  • BSC060P03NS3EGATMA1 Supplier

  • Infineon Technologies Distributor
  • BSC060P03NS3EGATMA1 Price
  • BSC060P03NS3EGATMA1 Distributor

BSC060P03NS3EGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C17.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs81nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds6020pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

The Products You May Be Interested In

DMN5L06WKQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 5V

Rds On (Max) @ Id, Vgs

2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323

Package / Case

SC-70, SOT-323

FDMS86202

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

13.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

7.2mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4250pF @ 60V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta), 156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power56

Package / Case

8-PowerTDFN

ZXM64P02XTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

90mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.9nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MSOP

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

FDZ209N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

80mOhm @ 4A, 5V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

657pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

12-BGA (2x2.5)

Package / Case

12-WFBGA

SPI11N65C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

25AA512T-I/SM

25AA512T-I/SM

Microchip Technology

IC EEPROM 512K SPI 20MHZ 8SOIJ

2016L100/33DR

2016L100/33DR

Littelfuse

PTC RESET FUSE 33V 1.1A 2016

74HC573D

74HC573D

Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

IRF9310TRPBF

IRF9310TRPBF

Infineon Technologies

MOSFET P-CH 30V 20A 8-SOIC

XC6206P152MR-G

XC6206P152MR-G

Torex Semiconductor Ltd

1UA LOW QUIESCENT 3 TERMINAL, LO

IHLP2525CZERR22M01

IHLP2525CZERR22M01

Vishay Dale

FIXED IND 220NH 23A 2.8 MOHM SMD

LTC1773EMS#TRPBF

LTC1773EMS#TRPBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK 10MSOP

RT6238BHGQUF

RT6238BHGQUF

Richtek USA Inc.

IC REG BUCK ADJUSTABLE 8A 14UQFN

SSC54HE3_A/H

SSC54HE3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A DO214AB

TMMDB3

TMMDB3

STMicroelectronics

DIAC 28-36V 2A MINIMELF

CDSU4148

CDSU4148

Comchip Technology

DIODE GEN PURP 75V 150MA 0603

MAX3076EESD+

MAX3076EESD+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC