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BSC060P03NS3EGATMA1

BSC060P03NS3EGATMA1

For Reference Only

Part Number BSC060P03NS3EGATMA1
PNEDA Part # BSC060P03NS3EGATMA1
Description MOSFET P-CH 30V 17.7A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,474
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 8 - Jul 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC060P03NS3EGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC060P03NS3EGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSC060P03NS3EGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C17.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs81nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds6020pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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