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BSC0910NDIATMA1

BSC0910NDIATMA1

For Reference Only

Part Number BSC0910NDIATMA1
PNEDA Part # BSC0910NDIATMA1
Description MOSFET 2N-CH 25V 16A/31A TISON8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,956
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC0910NDIATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC0910NDIATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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BSC0910NDIATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C11A, 31A
Rds On (Max) @ Id, Vgs4.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds4500pF @ 12V
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TISON-8

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