Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSC106N025S G

BSC106N025S G

For Reference Only

Part Number BSC106N025S G
PNEDA Part # BSC106N025S-G
Description MOSFET N-CH 25V 30A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,510
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC106N025S G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC106N025S G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC106N025S G, BSC106N025S G Datasheet (Total Pages: 10, Size: 378.44 KB)
PDFBSC106N025S G Datasheet Cover
BSC106N025S G Datasheet Page 2 BSC106N025S G Datasheet Page 3 BSC106N025S G Datasheet Page 4 BSC106N025S G Datasheet Page 5 BSC106N025S G Datasheet Page 6 BSC106N025S G Datasheet Page 7 BSC106N025S G Datasheet Page 8 BSC106N025S G Datasheet Page 9 BSC106N025S G Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSC106N025S G Datasheet
  • where to find BSC106N025S G
  • Infineon Technologies

  • Infineon Technologies BSC106N025S G
  • BSC106N025S G PDF Datasheet
  • BSC106N025S G Stock

  • BSC106N025S G Pinout
  • Datasheet BSC106N025S G
  • BSC106N025S G Supplier

  • Infineon Technologies Distributor
  • BSC106N025S G Price
  • BSC106N025S G Distributor

BSC106N025S G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1370pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 43W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

The Products You May Be Interested In

BSL211SPL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

67mOhm @ 4.7A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

12.4nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

654pF @ 15V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSOP-6-6

Package / Case

SOT-23-6 Thin, TSOT-23-6

NTD4959NHT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 11.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2155pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDA2712

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

34mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

129nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

10175pF @ 25V

FET Feature

-

Power Dissipation (Max)

357W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

AOK29S50L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1312pF @ 100V

FET Feature

-

Power Dissipation (Max)

357W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

BSC014N03LSGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

34A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

131nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10000pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 139W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

Recently Sold

T495D337K006ATE040

T495D337K006ATE040

KEMET

CAP TANT 330UF 10% 6.3V 2917

PIC16LF1705-I/P

PIC16LF1705-I/P

Microchip Technology

IC MCU 8BIT 14KB FLASH 14DIP

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

BLM18PG121SN1D

BLM18PG121SN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

ADF4350BCPZ-RL7

ADF4350BCPZ-RL7

Analog Devices

IC SYNTH PLL VCO FN/IN 32LFCSP

CMS05(TE12L,Q,M)

CMS05(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

MT25QU256ABA8ESF-0SIT

MT25QU256ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 256M SPI 133MHZ 16SOP2

AT25M01-SSHM-T

AT25M01-SSHM-T

Microchip Technology

IC EEPROM 1M SPI 20MHZ 8SOIC

B82422A1103K100

B82422A1103K100

TDK-EPCOS

FIXED IND 10UH 180MA 1.6 OHM SMD

HOA2003-001

HOA2003-001

Honeywell Sensing and Productivity Solutions

SENSOR OPTICAL 2.54MM MOD SLOT

NTF2955T1G

NTF2955T1G

ON Semiconductor

MOSFET P-CH 60V 1.7A SOT-223

SR1LARU

SR1LARU

STMicroelectronics

IC SMART RESET 4PIN 6.0S 6UDFN