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BSC109N10NS3GATMA1

BSC109N10NS3GATMA1

For Reference Only

Part Number BSC109N10NS3GATMA1
PNEDA Part # BSC109N10NS3GATMA1
Description MOSFET N-CH 100V 63A 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,490
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC109N10NS3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC109N10NS3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSC109N10NS3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs10.9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id3.5V @ 45µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 50V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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