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BSC13DN30NSFDATMA1

BSC13DN30NSFDATMA1

For Reference Only

Part Number BSC13DN30NSFDATMA1
PNEDA Part # BSC13DN30NSFDATMA1
Description MOSFET N-CH 300V 16A 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,042
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC13DN30NSFDATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC13DN30NSFDATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC13DN30NSFDATMA1, BSC13DN30NSFDATMA1 Datasheet (Total Pages: 11, Size: 921.96 KB)
PDFBSC13DN30NSFDATMA1 Datasheet Cover
BSC13DN30NSFDATMA1 Datasheet Page 2 BSC13DN30NSFDATMA1 Datasheet Page 3 BSC13DN30NSFDATMA1 Datasheet Page 4 BSC13DN30NSFDATMA1 Datasheet Page 5 BSC13DN30NSFDATMA1 Datasheet Page 6 BSC13DN30NSFDATMA1 Datasheet Page 7 BSC13DN30NSFDATMA1 Datasheet Page 8 BSC13DN30NSFDATMA1 Datasheet Page 9 BSC13DN30NSFDATMA1 Datasheet Page 10 BSC13DN30NSFDATMA1 Datasheet Page 11

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BSC13DN30NSFDATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2450pF @ 150V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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