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BSC152N10NSFGATMA1

BSC152N10NSFGATMA1

For Reference Only

Part Number BSC152N10NSFGATMA1
PNEDA Part # BSC152N10NSFGATMA1
Description MOSFET N-CH 100V 63A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,240
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC152N10NSFGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC152N10NSFGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC152N10NSFGATMA1, BSC152N10NSFGATMA1 Datasheet (Total Pages: 10, Size: 665.87 KB)
PDFBSC152N10NSFGATMA1 Datasheet Cover
BSC152N10NSFGATMA1 Datasheet Page 2 BSC152N10NSFGATMA1 Datasheet Page 3 BSC152N10NSFGATMA1 Datasheet Page 4 BSC152N10NSFGATMA1 Datasheet Page 5 BSC152N10NSFGATMA1 Datasheet Page 6 BSC152N10NSFGATMA1 Datasheet Page 7 BSC152N10NSFGATMA1 Datasheet Page 8 BSC152N10NSFGATMA1 Datasheet Page 9 BSC152N10NSFGATMA1 Datasheet Page 10

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BSC152N10NSFGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs15.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 72µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 50V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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