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BSC205N10LS G

BSC205N10LS G

For Reference Only

Part Number BSC205N10LS G
PNEDA Part # BSC205N10LS-G
Description MOSFET N-CH 100V 45A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,330
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC205N10LS G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC205N10LS G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC205N10LS G, BSC205N10LS G Datasheet (Total Pages: 10, Size: 658.44 KB)
PDFBSC205N10LS G Datasheet Cover
BSC205N10LS G Datasheet Page 2 BSC205N10LS G Datasheet Page 3 BSC205N10LS G Datasheet Page 4 BSC205N10LS G Datasheet Page 5 BSC205N10LS G Datasheet Page 6 BSC205N10LS G Datasheet Page 7 BSC205N10LS G Datasheet Page 8 BSC205N10LS G Datasheet Page 9 BSC205N10LS G Datasheet Page 10

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BSC205N10LS G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C7.4A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs20.5mOhm @ 45A, 10V
Vgs(th) (Max) @ Id2.4V @ 43µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2900pF @ 50V
FET Feature-
Power Dissipation (Max)76W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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