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BSC882N03MSGATMA1

BSC882N03MSGATMA1

For Reference Only

Part Number BSC882N03MSGATMA1
PNEDA Part # BSC882N03MSGATMA1
Description MOSFET N-CH 34V 22A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC882N03MSGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC882N03MSGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC882N03MSGATMA1, BSC882N03MSGATMA1 Datasheet (Total Pages: 10, Size: 542.17 KB)
PDFBSC882N03MSGATMA1 Datasheet Cover
BSC882N03MSGATMA1 Datasheet Page 2 BSC882N03MSGATMA1 Datasheet Page 3 BSC882N03MSGATMA1 Datasheet Page 4 BSC882N03MSGATMA1 Datasheet Page 5 BSC882N03MSGATMA1 Datasheet Page 6 BSC882N03MSGATMA1 Datasheet Page 7 BSC882N03MSGATMA1 Datasheet Page 8 BSC882N03MSGATMA1 Datasheet Page 9 BSC882N03MSGATMA1 Datasheet Page 10

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BSC882N03MSGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)34V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4300pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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