BSD214SN L6327
For Reference Only
| Part Number | BSD214SN L6327 |
| PNEDA Part # | BSD214SN-L6327 |
| Description | MOSFET N-CH 20V 1.5A SOT-363 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,114 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 7 - May 12 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
BSD214SN L6327 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | BSD214SN L6327 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BSD214SN L6327 Datasheet
- where to find BSD214SN L6327
- Infineon Technologies
- Infineon Technologies BSD214SN L6327
- BSD214SN L6327 PDF Datasheet
- BSD214SN L6327 Stock
- BSD214SN L6327 Pinout
- Datasheet BSD214SN L6327
- BSD214SN L6327 Supplier
- Infineon Technologies Distributor
- BSD214SN L6327 Price
- BSD214SN L6327 Distributor
BSD214SN L6327 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 3.7µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 143pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT363-6 |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 317A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6mOhm @ 158.5A, 10V Vgs(th) (Max) @ Id 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs 448nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 27400pF @ 25V FET Feature - Power Dissipation (Max) 1136W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SP6 Package / Case SP6 |
Manufacturer Microchip Technology Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 160mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 299mOhm @ 6A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 100V FET Feature - Power Dissipation (Max) 3W (Ta), 90W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerFlat™ (8x8) HV Package / Case 8-PowerVDFN |
Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer IXYS-RF Series HiPerRF™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 85mOhm @ 27.5A, 10V Vgs(th) (Max) @ Id 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6700pF @ 25V FET Feature - Power Dissipation (Max) 560W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264 (IXFK) Package / Case TO-264-3, TO-264AA |
