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BSD314SPEL6327HTSA1

BSD314SPEL6327HTSA1

For Reference Only

Part Number BSD314SPEL6327HTSA1
PNEDA Part # BSD314SPEL6327HTSA1
Description MOSFET P-CH 30V 1.5A SOT363
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,682
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSD314SPEL6327HTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSD314SPEL6327HTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSD314SPEL6327HTSA1, BSD314SPEL6327HTSA1 Datasheet (Total Pages: 9, Size: 414.67 KB)
PDFBSD314SPEL6327HTSA1 Datasheet Cover
BSD314SPEL6327HTSA1 Datasheet Page 2 BSD314SPEL6327HTSA1 Datasheet Page 3 BSD314SPEL6327HTSA1 Datasheet Page 4 BSD314SPEL6327HTSA1 Datasheet Page 5 BSD314SPEL6327HTSA1 Datasheet Page 6 BSD314SPEL6327HTSA1 Datasheet Page 7 BSD314SPEL6327HTSA1 Datasheet Page 8 BSD314SPEL6327HTSA1 Datasheet Page 9

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BSD314SPEL6327HTSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs140mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id2V @ 6.3µA
Gate Charge (Qg) (Max) @ Vgs2.9nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds294pF @ 15V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT363-6
Package / Case6-VSSOP, SC-88, SOT-363

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