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BSF050N03LQ3GXUMA1

BSF050N03LQ3GXUMA1

For Reference Only

Part Number BSF050N03LQ3GXUMA1
PNEDA Part # BSF050N03LQ3GXUMA1
Description MOSFET N-CH 30V 60A 2WDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,490
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSF050N03LQ3GXUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSF050N03LQ3GXUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSF050N03LQ3GXUMA1, BSF050N03LQ3GXUMA1 Datasheet (Total Pages: 13, Size: 1,520.05 KB)
PDFBSF050N03LQ3GXUMA1 Datasheet Cover
BSF050N03LQ3GXUMA1 Datasheet Page 2 BSF050N03LQ3GXUMA1 Datasheet Page 3 BSF050N03LQ3GXUMA1 Datasheet Page 4 BSF050N03LQ3GXUMA1 Datasheet Page 5 BSF050N03LQ3GXUMA1 Datasheet Page 6 BSF050N03LQ3GXUMA1 Datasheet Page 7 BSF050N03LQ3GXUMA1 Datasheet Page 8 BSF050N03LQ3GXUMA1 Datasheet Page 9 BSF050N03LQ3GXUMA1 Datasheet Page 10 BSF050N03LQ3GXUMA1 Datasheet Page 11

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BSF050N03LQ3GXUMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C15A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 15V
FET Feature-
Power Dissipation (Max)2.2W (Ta), 28W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON

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