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BSM150GB170DN2HOSA1

BSM150GB170DN2HOSA1

For Reference Only

Part Number BSM150GB170DN2HOSA1
PNEDA Part # BSM150GB170DN2HOSA1
Description MODULE IGBT 1700V
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,758
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSM150GB170DN2HOSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSM150GB170DN2HOSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
BSM150GB170DN2HOSA1, BSM150GB170DN2HOSA1 Datasheet (Total Pages: 9, Size: 133.69 KB)
PDFBSM150GB170DN2HOSA1 Datasheet Cover
BSM150GB170DN2HOSA1 Datasheet Page 2 BSM150GB170DN2HOSA1 Datasheet Page 3 BSM150GB170DN2HOSA1 Datasheet Page 4 BSM150GB170DN2HOSA1 Datasheet Page 5 BSM150GB170DN2HOSA1 Datasheet Page 6 BSM150GB170DN2HOSA1 Datasheet Page 7 BSM150GB170DN2HOSA1 Datasheet Page 8 BSM150GB170DN2HOSA1 Datasheet Page 9

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BSM150GB170DN2HOSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)220A
Power - Max1250W
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 150A
Current - Collector Cutoff (Max)1.5mA
Input Capacitance (Cies) @ Vce20nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

2.45V @ 15V, 400A

Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

36nF @ 25V

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NTC Thermistor

No

Operating Temperature

-40°C ~ 125°C

Mounting Type

Chassis Mount

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