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BSM200GB120DN2HOSA1

BSM200GB120DN2HOSA1

For Reference Only

Part Number BSM200GB120DN2HOSA1
PNEDA Part # BSM200GB120DN2HOSA1
Description IGBT 2 MED POWER 62MM-1
Manufacturer Infineon Technologies
Unit Price
1 ---------- $3,323.0354
50 ---------- $3,167.2681
100 ---------- $3,011.5008
200 ---------- $2,855.7335
400 ---------- $2,725.9275
500 ---------- $2,596.1214
In Stock 5,509
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSM200GB120DN2HOSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSM200GB120DN2HOSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules

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BSM200GB120DN2HOSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)290A
Power - Max1400W
Vce(on) (Max) @ Vge, Ic3V @ 15V, 200A
Current - Collector Cutoff (Max)4mA
Input Capacitance (Cies) @ Vce13nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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